Ka-Band 3-Stack Power Amplifier with 18.8 dBm P<sub>sat</sub> and 23.4 % PAE Using 22nm CMOS FDSOI Technology

This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.

Authors

Aikio Janne P., Hietanen Mikko, Tervo Nuutti, Rahkonen Timo, Pärssinen Aarno

Publication type

A4 Article in conference proceedings

Place of publication

2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). Orlando, FL, USA, Jan 20-23 2019

Published

Full citation

J. P. Aikio, M. Hietanen, N. Tervo, T. Rahkonen and A. Pärssinen, "Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology," 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/PAWR.2019.8708719

DOI

https://doi.org/10.1109/PAWR.2019.8708719

Read the publication here

http://urn.fi/urn:nbn:fi-fe2019081223985