Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xo heterojunctions for applications in nanostructured solar cells

Solar cells based on c-Si/porous-Si/CdS/ZnₓCd₁₋ₓO heterojunctions were synthesized by depositing CdS films on c-Si/porous-Si (PS) substrates by electrochemical deposition (ED). PS layers with systematically varied pore diameter (8÷45 nm) and were fabricated on p-type c-Si wafers using electrochemical etching. The window layers of ZnₓCd₁₋ₓO with several Zn concentrations(x=0.2; 0.4; 0.5 and 0.6) were also deposited on the CdS buffer layers by ED. The photoelectrical properties of heterojunctions were studied as functions of PS pore size and Zn content in ZnₓCd₁₋ₓO. The optimal pore size and Zn contents were found to be 10 nm and x=0.6, respectively. These yielded a solar cell sample exhibiting an efficiency of 9.9%, the maximum observed in this study.

Mamedov Huseyn M., Muradov Mustafa, Konya Zoltan, Kukovecz Akos, Kordas Krisztian, Shah Syed Ismat, Mamedova Vusala J., Ahmedova Khumar M., Tagiyev Elgun B., Mamedov Vusal U.

A1 Journal article – refereed

Mamedov, H., Muradov, M., Konya, Z., Kukovecz, A., Kordas, K., Shah, S. I., Mamedova, V., Ahmedova, K., Tagiyev, E., & Mamedov, V. (2018). Fabrication and characterization of c-Si/porous-Si/CdS/ZnxCd1-xO heterojunctions for applications in nanostructured solar cells. Photonics Letters of Poland, 10(3), 73. https://doi.org/10.4302/plp.v10i3.813

https://doi.org/10.4302/plp.v10i3.813 http://urn.fi/urn:nbn:fi-fe202003097626