>25 W pulses from 1.5 µm double-asymmetric waveguide, 100 µm stripe laser diode with bulk active layer

The experimental characterization of a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 m), with an asymmetric waveguide structure, a 100 m wide stripe, and a bulk active layer positioned very close to the p-cladding, is reported. An anti-reflection/high reflection coated laser with a stripe width of 100 m exhibits a single-facet output power over 25 W at a pumping current amplitude of 100 A.